6H-SiC Based Power VJFET and Its Temperature Dependence
نویسندگان
چکیده
link.springer.com/chapter/10.1007%2F978-3-642-37949-9_28#page-1 1/4 Look Inside Get Access Find out how to access preview-only content Quality, Reliability, Security and Robustness in Heterogeneous Networks Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering Volume 115, 2013, pp 325-332 6H-SiC Based Power VJFET and Its Temperature Dependence Abstract In this paper 6H-SiC VJFET has been shown and the s device characteristics are also shown. Further the optimization is also carried out with respect to the breakdown voltage. 6H-SiC VJFETs breakdown characteristic is also plotted and the parameter dependence of breakdown voltage is also shown. Electric field across the channel and across the channel and across the device length is also plotted. Page %P
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